Description :
Tenders for Supply Of Igbt (insulated Gate Bipolar Transistor) Is A Three-terminal Semiconductor Device (gate,collector, Emitter) That Combines The High-speed Switching Of A Mosfet With The Low Saturation Voltage Of Abipolar Junction Transistor (bjt). Specifications: (1) Model No:ff1400r17ip4 (2) Voltage : 1700 V (3) Current :1400 A (4) Repetitive Peak Collector Current : 2800 A (5) Collector-emitter Saturation Voltage : 1.75 V To 2.2v @ 1400a, 15v (6) Gate-emitter Peak Voltage :20 V (7) Module Type: Half-bridge (dual Switch). (8) Operating Temperature: -40 To 150 ?c. (9) Internal Gate Resistor: 1.6 Ohm. (10) Series/package: Prime Pac 3.make: Infineon, Mitsubishi, Semikron, Abb. [ Warranty Period: 12 Months After The Date Of Delivery ]
