Tender For supply of igbt (insulated gate bipolar transistor) is a three-terminal semiconductor device (gate,collector, emitter) that combines the high-speed switching of a mosfet with the low saturation voltage of abipolar junction transistor (bjt). specifications: (1) model no:ff1400r17ip4 (2) voltage : 1700 v (3) current :1400 a (4) repetitive peak collector current : 2800 a (5) collector-emitter saturation voltage : 1.75 v to 2.2v @ 1400a, 15v (6) gate-emitter peak voltage :20 v (7) module type: half-bridge (dual switch). (8) operating temperature: -40 to 150 ?c. (9) internal gate resistor: 1.6 ohm. (10) series/package: prime pac 3.make: infineon, mitsubishi, semikron, abb. [ warranty period: 12 months after the date of delivery ]
Tender For supply of variablefrequencydrive : - hv vfd rated for existing pump, erection and commissioning spares, special tools and tackles at sanghvi as per mr sl. no. 1.0, 1.c, 1.d , mandatory spares for item no. 1.0 as per mr sl. no. 1.a , 2 years spares for item no. 1.0 as per mr sl. no. 1.b , supervision of erection and commissioning for item no. 1.0 as per mr sl. no. 1.e , comprehensive annual maintenance charges for first year as per mr sl. no. 1.f , comprehensive annual maintenance charges for second year for vfds as per mr sl. no. 1.g , comprehensive annual maintenance charges for third year for vfds as per mr sl. no. 1.h , comprehensive annual maintenance charges for fourth year for vfds as per mr sl. no. 1.i , comprehensive annual maintenance charges for fifth year for vfds as per mr sl. no. 1.j , training as per mr sl. no. 1.k