Tender For supply of bt 09 of 10w jammer cris , coil 03 uh of 10w jammer cris , power cable connector of 10w jammer cris , ra 30h 1317m of 10w jammer cris , mosfet 28100 of 200w jammer ashi , lm 338 of 200w jammer ashi , mosfet 166w of 200w jammer ashi , toggle switch of 40w jammer aqua , power distribution card of 40w jammer aqua , pre amp card ch2 of 40w jammer aqua
Tender For supply of igbt (insulated gate bipolar transistor) is a three-terminal semiconductor device (gate,collector, emitter) that combines the high-speed switching of a mosfet with the low saturation voltage of abipolar junction transistor (bjt). specifications: (1) model no:ff1400r17ip4 (2) voltage : 1700 v (3) current :1400 a (4) repetitive peak collector current : 2800 a (5) collector-emitter saturation voltage : 1.75 v to 2.2v @ 1400a, 15v (6) gate-emitter peak voltage :20 v (7) module type: half-bridge (dual switch). (8) operating temperature: -40 to 150 ?c. (9) internal gate resistor: 1.6 ohm. (10) series/package: prime pac 3.make: infineon, mitsubishi, semikron, abb. [ warranty period: 12 months after the date of delivery ]
Tender For bid to ras supply of mosfet sr 401 of ecm jammer mk ii , mosfet 28100 of ecm jammer mk ii , mosfet 2840g of ecm jammer mk ii , mosfet mrf 141g of ecm jammer mk ii , capacitor 47uf 500v of ecm jammer mk ii , toggle switch of ecm jammer mk ii , hard disk 40gb of ecm jammer mk ii , rugged styles pen of ecm jammer mk ii , battery terminal clamp of ecm jammer mk ii
Tender For supply of boq boq boq c c - hcms 2965 , elect bat 3 point 6v 11 mah ni mh , ic flash u15 programmed , micro circuit memory fpga 2 programmed , q switch assembly , fuse link electrical axial leakage very fast acting 125 vdc 1 point 0 amps , mosfet p channel irf 9530