Latest manufacturing machine Tenders | Government manufacturing machine Tenders

State Government

CTN :45715629

14 Jul, 2026 NA

Pithoragarh - Uttarakhand

Tender For supply of 35 mm monolayer blown film plant 20inch roller size with 4 inch die , 2 inch bottom cutting sealing machine servo base double decker , handle punching machine w u d cut punch die set 5 pcs , 2hp air compressor , online stamp printer 5 inch , 5tr cooling tower , 10 hp granule mixture , pbat per kg 500 , filler per kg 180 , single die dona pattal manufacturing machine with 12inch three compartment plate die , raw material dona pattal plates

Central Government/Public Sector

CTN :45541842

08 Jul, 2026 NA

Aurangabad(Bh) - Bihar

Tender For corrigendum : supply, erection and commissioning of semi-automatic fly ash bricks manufacturing machine at brbcl nabinagar

CTN :45721103

27 Jul, 2026 NA

Dausa - Rajasthan

Tender For procurement of equipment for dausa stone carving foundation (spv) - machine, cnc stone engraving machine -2 head (2500 mm x 3000mm x 500 mm), cnc stone engraving machine -2 head (2500 mm x 3600mm x 500 mm), cnc engraving machine -4 head (3000 mm x 1500mm x 500 mm), profile machine with carving 2 head (3000 mm x 3600 mm x 600 mm), stone pillar turning and engraving machine (3000 mm x 3600 mm x 600mm), cnc tilting carving machine 180 degree (3000 x 3600x600), 5 axis statue manufacturing machine (3000x2000x1500 cube feet), solar plant (100 kva), eot crane (3 tonne)

State Government

CTN :45592586

06 Jul, 2026 NA

Ernakulam - Kerala

Tender For corrigendum : traco- re tender of tender for iinviting expression of interest for dismantling of cable manufacturing machine from our irmpanam unit and successful installation to be done at at our factory at thiruvalla, pathanamthitta- dist, kerala including trail run at there

Central Government/Public Sector

CTN :45696227

16 Jul, 2026 NA

Trichy - Tamil Nadu

Tender For supply and installation of additive manufacturing machine

Central Government/Public Sector

CTN :45361550

07 Jul, 2026 NA

Kolkata - West Bengal

Tender For corrigendum : supply of benchtop dc magnetron multi-target sputtering system

State Government

CTN :45475870

15 Jun, 2026 NA

Ernakulam - Kerala

Tender For traco- tender for inviting expression of interest for the dismantling of cable manufacturing machines from our irmpanam unit and successful installation to be done at at our factory at thiruvalla, pathanamthitta- dist, kerala including trail run at there .

CTN :45444446

30 Jun, 2026 NA

Gandhinagar - Gujarat

Tender For supply of automation mechanisms to the shutter and substrate rotation assemblies of magnetron sputtering system

State Government

CTN :45142197

05 Jun, 2026 NA

Ernakulam - Kerala

Tender For corrigendum : traco- expression of interest is invited for the dismantling of cable manufacturing machines from our irmpanam unit and successful installation to be done at at our factory at thiruvalla, pathanamthitta- dist, kerala including trail run at there .

Central Government/Public Sector

CTN :45263257

23 Jun, 2026 NA

Delhi - Delhi

Tender For supply of uhv deposition chamber - uhv chamber specification (vacuum better than 2 10-9 mbar uhv) chamber overview spherical (diameter 14 ) or equivalent square shaped uhv chamber with support frame equipped with three (3) x 2-inch magnetron sputtering sources. all cf flanges and uhv viewports/ss blanks, three (3) x 2-inch magnetron sputtering sources. each sputtering source has an individual gas inlet line for process gases. all cf flanges., substrate holder : diameter: 2 inches; heating molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature to 1000 c without rotation. rotation: substrate holder can rotate continuously, driven by a stepper motor. variable speed from 0 to 10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to the substrate surface, tilt adjustable. two sputtering sources mounted confocally at an angle relative to the substrate. base pressure: lower than 2 10 mbar (ultra-high vacuum)., vacuum pumping system: turbo molecular pump: pfeiffer hipace300 / edwards next 300 / leybold turbovac 350i with cf100 flange or equivalent with integrated controller, ion pump with controller: included to maintain uhv vacuum levels and provide clean pumping., backing pump: pfeiffer hiscroll 12 / edwards nxds 15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves : one cf100 and one cf150 manual gate valves for isolating the chamber from the pumping systems as well as throttling, vacuum gauges and measurement: one cold cathode gauge with readout capable of measuring vacuum pressures down to1 10-10 mbar for precise uhv monitoring., one capacitance manometer gauge with measurement range from 1 10-1 to 1 10 mbar for accurate pressure reading during deposition phase, gas delivery system: two independent mass flow controllers (mfcs):a. one mfc (0-100 sccm) for argon gas feeding to all three sputtering sources via high vacuum valves.b. one mfc (0-100 sccm) for nitrogen gas feeding directly into the chamber with its own high vacuum valve.gas lines for ar and n2 are physically separated to avoid cross-contamination., chamber access and viewports: 1. two view ports installed on the chamber, each equipped with manual shutters. 2. access ports for gauges, pump, gas inlet and few spares for future upgradation., baking capability: entire chamber designed to bake-out at 150 c to reduce contamination and out gassing during operation, cooling capability : water manifold with flow switch / flow meters, near uhv chamber specification: chamber overview: spherical (diameter 14 ) or equivalent square shaped uhv chamber with stand., three 2-inch magnetron sputtering sources, each with individual gas inlet. all cf flanges and uhv viewports/ss blanks., substrate holder: a. diameter: 2inches; heating : molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature (rt) to 1000 c without rotation b. rotation : substrate holder driven by stepper motor. variable speed from 0 to10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to substrate surface (tilt able preferred). two sputtering sources mounted confocally at an angle. base pressure : lower than 5 10 mbar (near uhv)., vacuum pumping system: turbo molecular pump : pfeiffer hipace 700 / edwards next 730 / leybold turbo vac 900 ix or equivalent with cf100 flange and integrated controller, suitable for near uhv vacuum., backing pump: pfeiffer hi scroll 12/edwards nxds15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves: one cf150 manual gate valve to isolate / throttle chamber from pumping system, vacuum gauges and measurement: cold cathode readout capable of dis

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