Phosphine Gas Tenders

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Central Government/Public Sector

CTN :45263257

23 Jun, 2026 NA

Delhi - Delhi

Tender For supply of uhv deposition chamber - uhv chamber specification (vacuum better than 2 10-9 mbar uhv) chamber overview spherical (diameter 14 ) or equivalent square shaped uhv chamber with support frame equipped with three (3) x 2-inch magnetron sputtering sources. all cf flanges and uhv viewports/ss blanks, three (3) x 2-inch magnetron sputtering sources. each sputtering source has an individual gas inlet line for process gases. all cf flanges., substrate holder : diameter: 2 inches; heating molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature to 1000 c without rotation. rotation: substrate holder can rotate continuously, driven by a stepper motor. variable speed from 0 to 10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to the substrate surface, tilt adjustable. two sputtering sources mounted confocally at an angle relative to the substrate. base pressure: lower than 2 10 mbar (ultra-high vacuum)., vacuum pumping system: turbo molecular pump: pfeiffer hipace300 / edwards next 300 / leybold turbovac 350i with cf100 flange or equivalent with integrated controller, ion pump with controller: included to maintain uhv vacuum levels and provide clean pumping., backing pump: pfeiffer hiscroll 12 / edwards nxds 15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves : one cf100 and one cf150 manual gate valves for isolating the chamber from the pumping systems as well as throttling, vacuum gauges and measurement: one cold cathode gauge with readout capable of measuring vacuum pressures down to1 10-10 mbar for precise uhv monitoring., one capacitance manometer gauge with measurement range from 1 10-1 to 1 10 mbar for accurate pressure reading during deposition phase, gas delivery system: two independent mass flow controllers (mfcs):a. one mfc (0-100 sccm) for argon gas feeding to all three sputtering sources via high vacuum valves.b. one mfc (0-100 sccm) for nitrogen gas feeding directly into the chamber with its own high vacuum valve.gas lines for ar and n2 are physically separated to avoid cross-contamination., chamber access and viewports: 1. two view ports installed on the chamber, each equipped with manual shutters. 2. access ports for gauges, pump, gas inlet and few spares for future upgradation., baking capability: entire chamber designed to bake-out at 150 c to reduce contamination and out gassing during operation, cooling capability : water manifold with flow switch / flow meters, near uhv chamber specification: chamber overview: spherical (diameter 14 ) or equivalent square shaped uhv chamber with stand., three 2-inch magnetron sputtering sources, each with individual gas inlet. all cf flanges and uhv viewports/ss blanks., substrate holder: a. diameter: 2inches; heating : molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature (rt) to 1000 c without rotation b. rotation : substrate holder driven by stepper motor. variable speed from 0 to10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to substrate surface (tilt able preferred). two sputtering sources mounted confocally at an angle. base pressure : lower than 5 10 mbar (near uhv)., vacuum pumping system: turbo molecular pump : pfeiffer hipace 700 / edwards next 730 / leybold turbo vac 900 ix or equivalent with cf100 flange and integrated controller, suitable for near uhv vacuum., backing pump: pfeiffer hi scroll 12/edwards nxds15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves: one cf150 manual gate valve to isolate / throttle chamber from pumping system, vacuum gauges and measurement: cold cathode readout capable of dis

State Government

CTN :44849694

12 May, 2026 4.65 Lacs

Umaria - Madhya Pradesh

Tender For corrigendum : supply and refilling of dry nitrogen gas along with nitrogen gas cylinder parts testing and painting for 8.5 e-9 abl make coal mills installed at unit no. 1 to 4 at sgtps, mppgcl, birsinghpur. - supply & refilling of “dry nitrogen gas along with nitrogen gas cylinder parts” testing and painting for 8.5 e-9 abl make coal mills installed at unit no. 1 to 4 at sgtps, mppgcl, birsinghpur.

State Government

CTN :44832195

24 Apr, 2026 NA

Nagpur - Maharashtra

Tender For contract on as and when required basis for refilling of zero grade nitrogen gas, zero grade hydrogen gas, dry air and argon gas in our own gas cylinders or in agency s cylinders on rental basis (after free period) for transformer oil testing laboratory, ccotl, expansion service building near 3x660 mw ktps, koradi under o/o. dy.ce-iii (fm), mspgcl, nagpur for 2 years.

CTN :44727958

23 Apr, 2026 NA

Mumbai - Maharashtra

Tender For providing of custom bid for services - annual contract for supply of dry nitrogen gas quads (16 cylinders per quad, each having 7.0 m3 of compressed n2) at oap and nec locations of aiesl in mumbai for a period of 2 years.

CTN :44503572

07 Apr, 2026 NA

Chennai - Tamil Nadu

Tender For empanelment of vendors for commercial and high purity gases for research purposes - empanelment of vendors for commercial & high purity gases for research purposes as per technical specification in annexure-a, high pure argon gas grade 1 purity 99.9995%, high pure hydrogen o grade purity 99.9995%, high pure oxygen - 2.80 grade purity 99.999%, ultra high pure nitrogen grade 1 purity 99.9999%, high pure helium 4.5 grade purity 99.995%, ultra high pure he 99.999, compressed oxygen, dry nitrogen, dissolved acetylene, hydrogen, zero air, carbon dioxide (in kg), high pure argon gas 5.0 grade purity 99.999%, high pure nitrogen gas 5.0 grade purity 99.999%, high pure hydrogen gas 5.0 grade purity 99.999%, holding charges after the free period (per cylinder)

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